Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

STL52N25M5

Banner
productimage

STL52N25M5

MOSFET N-CH 250V 28A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL52N25M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This device offers a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 28A at 25°C (Tc). With a maximum Rds(on) of 65mOhm at 14A and 10V, it features low conduction losses. The device is housed in an 8-PowerVDFN, PowerFlat™ (5x6) package suitable for surface mounting, with a Tape & Reel (TR) packaging. Key parameters include a gate charge (Qg) of 47nC @ 10V and input capacitance (Ciss) of 1770pF @ 50V. Maximum power dissipation is 2.5W (Ta) and 110W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is utilized in applications such as power supplies and industrial motor control.

Additional Information

Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Tc)
Rds On (Max) @ Id, Vgs65mOhm @ 14A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id5V @ 100µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1770 pF @ 50 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy