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STL50N6F7

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STL50N6F7

MOSFET N-CH 60V 60A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL50N6F7, an N-Channel STripFET™ F7 series MOSFET, offers a 60V drain-source voltage and 60A continuous drain current at 25°C (Tc). This device features a low on-resistance of 11mOhm maximum at 7.5A and 10V (Vgs), with a typical gate charge of 17nC at 10V. The input capacitance (Ciss) is 1035pF maximum at 30V (Vds). Designed for efficient power handling, it dissipates a maximum of 71W at 25°C (Tc). The STL50N6F7 is housed in an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) footprint, for surface mounting. Its high operating temperature range of -55°C to 175°C (TJ) makes it suitable for automotive and industrial applications requiring robust power switching capabilities. The device is supplied on tape and reel.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs11mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)71W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1035 pF @ 30 V

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