STL4P3LLH6
MOSFET P-CH 30V 4A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL4P3LLH6 is a P-Channel Power Flat™ (2x2) MOSFET from the DeepGATE™, STripFET™ H6 series. This device offers a 30V drain-source breakdown voltage and a continuous drain current capability of 4A at 25°C. Featuring a low on-resistance of 56mOhm maximum at 2A and 10V, the STL4P3LLH6 is designed for efficient power switching. Its maximum power dissipation is 2.4W at 25°C. The component is suitable for surface mounting and is supplied in tape and reel packaging. Key parameters include a gate charge of 6nC at 4.5V and input capacitance of 639pF at 25V. Operating temperature range extends to 150°C. This MOSFET is utilized in various industrial applications requiring robust power management.
Additional Information
Series: DeepGATE™, STripFET™ H6RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 639 pF @ 25 V |