STL4P2UH7
MOSFET P-CH 20V 4A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics P-Channel PowerFlat™ MOSFET, part number STL4P2UH7, from the DeepGATE™ and STripFET™ VII series. This 20V device offers a continuous drain current of 4A (Tc) with a maximum on-resistance of 100mOhm at 2A and 4.5V Vgs. Features include a gate charge of 4.8 nC @ 4.5V and input capacitance of 510 pF @ 10V. The STL4P2UH7 is packaged in a 6-PowerWDFN (PowerFlat™ 2x2) surface mount configuration, suitable for operation up to 150°C (TJ). This MOSFET is utilized in applications such as power management, battery protection, and load switching within the automotive and industrial sectors.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerFlat™ (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V |
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