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STL45N10F7AG

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STL45N10F7AG

MOSFET N-CH 100V 18A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL45N10F7AG is an N-Channel STripFET™ F7 series MOSFET designed for demanding applications. This device offers a 100V drain-source breakdown voltage and a continuous drain current of 18A at 25°C (Tc), with a maximum power dissipation of 72W (Tc). Featuring a low on-resistance of 24mOhm at 9A and 10V, this MOSFET utilizes advanced STripFET™ F7 technology for enhanced performance. The STL45N10F7AG is qualified to AEC-Q101 and carries an automotive grade, making it suitable for automotive power management systems and industrial control applications. It is supplied in an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) format, for efficient surface mounting. The gate charge (Qg) is 19.5 nC maximum at 10V, and input capacitance (Ciss) is 1450 pF maximum at 50V. The operating temperature range is from -55°C to 175°C (TJ).

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Rds On (Max) @ Id, Vgs24mOhm @ 9A, 10V
FET Feature-
Power Dissipation (Max)72W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1450 pF @ 50 V
QualificationAEC-Q101

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