STL42N65M5
MOSFET N-CH 650V 4A PWRFLAT HVManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL42N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This device features a 650V drain-source breakdown voltage and a continuous drain current of 4A at ambient temperature (4A Ta) and 34A at case temperature (34A Tc). The STL42N65M5 offers a low on-resistance of 79mOhm maximum at 16.5A and 10V Vgs. With a maximum power dissipation of 3W at ambient temperature (3W Ta) and 208W at case temperature (208W Tc), it utilizes STMicroelectronics' PowerFlat™ (8x8) HV package for efficient surface mounting. Key parameters include a gate charge of 100 nC at 10V and input capacitance of 4650 pF at 100V. This component is suitable for high-voltage applications across various industries, including power supplies and motor control. The device operates at a junction temperature up to 150°C.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta), 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 79mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 208W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4650 pF @ 100 V |
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