STL40N10F7
MOSFET N-CH 100V 40A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL40N10F7 is an N-channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc). The Rds On is specified at a maximum of 24mOhm at 10A and 10V. The device utilizes Metal Oxide technology and is housed in an 8-PowerVDFN package, specifically STMicroelectronics' PowerFlat™ (5x6) format, supplied on Tape & Reel (TR). With a maximum gate charge (Qg) of 19 nC at 10V and input capacitance (Ciss) of 1270 pF at 50V, it is designed for efficient switching applications. This MOSFET offers a maximum power dissipation of 5W (Ta) and 70W (Tc), with an operating junction temperature range of -55°C to 175°C. It is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 50 V |
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