STL3N10F7
MOSFET N-CH 100V 4A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL3N10F7 is an N-channel STripFET™ VII Power MOSFET designed for efficient power switching applications. Featuring a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 4A at 25°C (Tc), this device offers a maximum On-Resistance (Rds On) of 70mOhm at 2A, 10V. The component utilizes a 2x2mm PowerFlat™ package, a 6-PowerWDFN footprint, for optimal thermal performance with a maximum power dissipation of 2.4W (Tc). Key parameters include a gate charge of 7.8 nC at 10V and input capacitance (Ciss) of 408 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), the STL3N10F7 is suitable for use in industrial, automotive, and consumer electronics sectors.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 408 pF @ 25 V |
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