STL36N60DM6
MOSFET N-CH 600V 15A PWRFLAT HVManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STL36N60DM6, an N-Channel Power MOSFET from the MDmesh™ DM6 series, offers 600V drain-source voltage and 15A continuous drain current at 25°C. This device features a low on-resistance of 215mOhm maximum at 7.5A, 10V, and a gate charge of 24nC maximum at 10V. The STL36N60DM6 is packaged in an 8-PowerVDFN (PowerFlat™ HV) surface mount package, dissipating up to 110W at 25°C. Key parameters include 940pF maximum input capacitance and a gate-source voltage range of ±25V. This component is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: MDmesh™ DM6RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 100 V |
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