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STL35N75LF3

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STL35N75LF3

MOSFET N-CH 75V 32A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL35N75LF3 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 75V drain-source breakdown voltage and a continuous drain current capability of 32A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The STL35N75LF3 offers a low on-resistance of 25mOhm at 4A and 10V Vgs, facilitated by its 4.5V to 10V drive voltage range. Key parameters include a gate charge of 7.5 nC at 4.5V and input capacitance of 800 pF at 50V. The component is housed in an 8-PowerVDFN package, also known as PowerFlat™ (3.3x3.3), suitable for surface mounting and supplied on tape and reel. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is utilized in power supply, automotive, and industrial control sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Rds On (Max) @ Id, Vgs25mOhm @ 4A, 10V
FET Feature-
Power Dissipation (Max)50W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackagePowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 50 V

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