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STL35N15F3

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STL35N15F3

MOSFET N-CH 150V 33A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL35N15F3 is an N-Channel Power MOSFET from the STripFET™ III series. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 33 A at 25°C (Tc), with a maximum power dissipation of 80 W (Tc). The device offers a low on-resistance (Rds On) of 40 mOhm at 3.5 A and 10 V (Vgs), achieved with a 10 V gate drive voltage. Key parameters include a gate charge (Qg) of 49.4 nC at 10 V and an input capacitance (Ciss) of 1905 pF at 25 V. The STL35N15F3 is supplied in an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) format, for surface mounting and is delivered on tape and reel. This MOSFET is suitable for applications in power supplies, motor control, and automotive systems.

Additional Information

Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Rds On (Max) @ Id, Vgs40mOhm @ 3.5A, 10V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1905 pF @ 25 V

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