STL34N65M5
MOSFET N-CH 650V 3.2A PWRFLAT88Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL34N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This device offers a 650V drain-source breakdown voltage and a continuous drain current capability of 22.5A at 25°C (Tc). Featuring a low on-resistance of 120mOhm maximum at 12A and 10V Vgs, it utilizes ST's proprietary MESH OVERLAY™ technology for enhanced performance. The STL34N65M5 is packaged in an 8-PowerVDFN (PowerFlat™ 8x8 HV) surface mount configuration, ideal for high-density power applications. Key electrical parameters include a gate charge (Qg) of 62.5 nC max at 10V and input capacitance (Ciss) of 2700 pF max at 100V. Maximum junction temperature is 150°C. This component is suitable for use in power factor correction (PFC), switch-mode power supplies (SMPS), and high-voltage converters across various industrial and consumer electronics sectors.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 62.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 100 V |
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