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STL325N4LF8AG

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STL325N4LF8AG

AUTOMOTIVE-GRADE N-CHANNEL 40 V

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL325N4LF8AG is an automotive-grade N-channel MOSFET designed for high-power switching applications. This component features a 40 V drain-to-source voltage and a continuous drain current capability of 373 A at 25°C, with a maximum power dissipation of 188 W at the same temperature. The STL325N4LF8AG offers a low on-resistance of 0.75 mOhm at 60 A and 10 V gate-source voltage. Its AEC-Q101 qualification ensures reliability in demanding automotive environments. The device is packaged in an 8-PowerVDFN format with Wettable Flank technology for enhanced solder joint reliability, and is supplied on tape and reel. Key parameters include a gate charge of 95 nC at 10 V and input capacitance of 7657 pF at 25 V. This MOSFET is suitable for applications within the automotive sector.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C373A (Tc)
Rds On (Max) @ Id, Vgs0.75mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)188W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7657 pF @ 25 V
QualificationAEC-Q101

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