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STL325N4F8AG

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STL325N4F8AG

POWERFLAT 5X6 WF

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL325N4F8AG is an N-Channel STripFET™ F8 series MOSFET. This device features a 40 V drain-to-source voltage (Vdss) and a continuous drain current of 373 A at 25°C (Tc), with a maximum power dissipation of 188 W (Tc). The Rds On is specified at a maximum of 0.75 mOhm at 60 A, 10 V. The STL325N4F8AG utilizes a Surface Mount mounting type within an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) configuration, supplied on Tape & Reel (TR). Key electrical parameters include a gate charge (Qg) of 95 nC at 10 V and an input capacitance (Ciss) of 7657 pF at 25 V. Operating temperature ranges from -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power systems.

Additional Information

Series: STripFET™ F8RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C373A (Tc)
Rds On (Max) @ Id, Vgs0.75mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)188W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7657 pF @ 25 V

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