STL30N10F7
MOSFET N-CH 100V 30A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL30N10F7 is a 100V N-Channel Power MOSFET from the STripFET™ VII series, featuring DeepGATE™ technology. This component is designed for high-efficiency power switching applications. It offers a continuous drain current of 30A at 25°C (Tc) and a maximum power dissipation of 75W (Tc). The device exhibits a low on-resistance of 35mOhm maximum at 4A and 10V gate drive. Key electrical characteristics include a Vgs(th) of 4.5V maximum at 250µA, gate charge (Qg) of 14 nC maximum at 10V, and input capacitance (Ciss) of 920 pF maximum at 50V. The STL30N10F7 is housed in an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) footprint, suitable for surface mounting. This MOSFET is utilized in automotive, industrial, and power supply applications. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 50 V |
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