STL285N4F7AG
MOSFET N-CH 40V 120A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL285N4F7AG is an N-Channel STripFET™ F7 series power MOSFET designed for high-efficiency power management applications. This device features a 40 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 120 A at 25°C (Tc). With a low on-resistance (Rds On) of 1.1 mOhm at 24 A and 10 V (Vgs), it delivers superior conduction performance. The device is housed in an 8-PowerVDFN (PowerFlat™ 5x6) package, enabling efficient thermal dissipation with a maximum power dissipation of 188 W (Tc). Key parameters include a gate charge (Qg) of 67 nC at 10 V and input capacitance (Ciss) of 5600 pF at 25 V. The STL285N4F7AG is suitable for use in automotive and industrial power systems.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 188W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |
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