STL26N30M8
MOSFET N-CH 300V 23A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ M8 series N-Channel Power MOSFET, part number STL26N30M8. This device features a 300V drain-to-source voltage (Vdss) and continuous drain current of 23A (Tc) at 25°C. With a maximum power dissipation of 114W (Tc), it offers a low on-resistance (Rds On) of 89mOhm at 11.5A and 10V gate-source voltage. The STL26N30M8 utilizes STMicroelectronics' advanced MDmesh™ M8 technology for enhanced performance. Key parameters include a gate charge (Qg) of 30.8 nC @ 10V and input capacitance (Ciss) of 1430 pF @ 100V. This MOSFET is housed in an 8-PowerVDFN package, also known as PowerFlat™ (5x6), for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power factor correction, switch mode power supplies, and high-efficiency converters.
Additional Information
Series: MDmesh™ M8RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 89mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 114W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 100 V |
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