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STL260N4LF7

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STL260N4LF7

N-CHANNEL 40 V, 0.00085 OHM TYP.

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL260N4LF7 is a N-Channel Power MOSFET from the STripFET™ F7 series. This device features a 40V drain-to-source voltage (Vdss) and offers a low on-resistance of 0.85 mOhm typical at 25A, 10V. It is rated for 120A continuous drain current (Id) at 25°C (Tc) and a maximum power dissipation of 188W (Tc). The STL260N4LF7 utilizes a PowerFlat™ (5x6) package for surface mounting, with a supplied device package of 8-PowerVDFN. Key electrical characteristics include a gate charge (Qg) of 42 nC maximum at 4.5V and input capacitance (Ciss) of 6000 pF maximum at 25V. The drive voltage range for optimal Rds On is 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. This component is suitable for applications in automotive and industrial sectors. The part is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs1.1mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)188W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6000 pF @ 25 V

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