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STL260N3LLH6

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STL260N3LLH6

MOSFET N-CH 30V 260A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL260N3LLH6, an N-Channel STripFET™ H6 Power MOSFET, offers robust performance in a compact Surface Mount PowerFlat™ (5x6) package. This device features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 260 A at 25°C (Tc), with a maximum power dissipation of 166 W (Tc). The Rds On is specified at a maximum of 1.3 mOhm at 22.5 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 61.5 nC at 4.5 V and input capacitance (Ciss) of 6375 pF at 25 V. Designed for operation across an industrial temperature range of -55°C to 175°C (TJ), this component is suitable for applications in automotive and industrial power management. The device utilizes Metal Oxide technology and supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V and a Vgs(th) of 1V minimum. It is supplied in Tape & Reel packaging.

Additional Information

Series: STripFET™ H6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C260A (Tc)
Rds On (Max) @ Id, Vgs1.3mOhm @ 22.5A, 10V
FET Feature-
Power Dissipation (Max)166W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA (Min)
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs61.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6375 pF @ 25 V

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