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STL24NM60N

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STL24NM60N

MOSFET N-CH 600V 16A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL24NM60N is an N-channel Power Flat™ (8x8) HV MOSFET from the MDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current capability of 16 A (Tc) at 25°C. With a maximum Rds On of 215 mOhm at 8 A and 10 V, it offers efficient switching performance. The device supports a gate drive voltage of 10 V and has a maximum operating temperature of 150°C (TJ). Key characteristics include a gate charge (Qg) of 46 nC @ 10 V and input capacitance (Ciss) of 1400 pF @ 50 V. The 8-PowerVDFN package is suitable for surface mounting. This MOSFET is utilized in power supply applications, industrial automation, and renewable energy systems. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs215mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackagePowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 50 V

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