STL23NM60ND
MOSFET N-CH 600V 19.5A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL23NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series, designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 19.5A at 25°C (Tc). The STL23NM60ND offers a low on-resistance of 180mOhm maximum at 10A, 10V, with a gate drive requirement of 10V. Key parameters include a maximum gate charge (Qg) of 70 nC at 10V and an input capacitance (Ciss) of 2050 pF maximum at 50V. The device supports a maximum junction temperature of 150°C and dissipates up to 3W (Ta) or 150W (Tc). It is supplied in the PowerFlat™ (8x8) HV package, a surface-mount 8-PowerVDFN, on tape and reel. This component is suitable for use in power supply, lighting, and industrial applications.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 50 V |