STL23NM50N
MOSFET N-CH 500V 2.8A PWRFLT 8X8Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL23NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This device offers a Vdss rating of 500V and a continuous drain current of 2.8A at 25°C ambient, extending to 14A at 25°C case temperature. With a maximum Rds(on) of 210mOhm at 7A and 10V Vgs, it features a PowerFlat™ (8x8) HV package for surface mounting. The device supports a gate drive voltage up to 10V and has a maximum gate-source voltage of ±25V. Key capacitive parameters include Ciss of 1330pF max at 50V Vds and Qg of 45nC max at 10V Vgs. Power dissipation is rated at 3W (Ta) and 125W (Tc). This component is suitable for applications in power supply, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta), 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1330 pF @ 50 V |
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