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STL225N6F7AG

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STL225N6F7AG

MOSFET N-CH 60V 120A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL225N6F7AG is an STripFET™ F7 series N-channel Power MOSFET designed for demanding applications. This component offers a 60V drain-source voltage and a continuous drain current of 120A at 25°C (Tc), with a maximum power dissipation of 188W (Tc). Featuring a low on-resistance of 1.4mOhm at 60A and 10V, it utilizes STMicroelectronics' advanced MOSFET technology. The STL225N6F7AG is housed in an 8-PowerVDFN, PowerFlat™ (5x6) package with wettable flanks for enhanced solder joint reliability. Key parameters include a gate charge of 98nC at 10V and input capacitance of 6500pF at 25V. This device is AEC-Q101 qualified and suitable for automotive applications, operating across a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs1.4mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)188W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6500 pF @ 25 V
QualificationAEC-Q101

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