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STL220N6F7

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STL220N6F7

MOSFET N-CH 60V 120A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL220N6F7 from the STripFET™ F7 series is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 187W (Tc). The low on-resistance of 1.4mOhm at 20A and 10V gate drive voltage ensures efficient power transfer. Key parameters include a gate charge (Qg) of 100 nC at 10V and input capacitance (Ciss) of 6600 pF at 25V. Packaged in an 8-PowerVDFN (PowerFlat™ 5x6) and supplied on tape and reel, this MOSFET is suitable for surface mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Its robust characteristics make it relevant for power management, automotive, and industrial sectors.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs1.4mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6600 pF @ 25 V

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