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STL210N4LF7AG

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STL210N4LF7AG

MOSFET N-CH 40V 120A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STripFET™ F7 series STL210N4LF7AG is a 40V N-Channel Power MOSFET. This device features a low Rds(on) of 1.6 mOhm at 30A and 10V Vgs, with a continuous drain current capability of 120A (Tc) and a maximum power dissipation of 150W (Tc). It is housed in an 8-PowerVDFN package, also known as PowerFlat™ (5x6), for efficient surface mounting. Key electrical characteristics include a gate charge of 56 nC at 10V Vgs and an input capacitance of 4210 pF at 25V Vds. Designed for demanding applications and qualified to AEC-Q101, this MOSFET is suitable for automotive and industrial power management systems. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 4.5V to 10V, with a maximum Vgs of ±20V.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs1.6mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4210 pF @ 25 V
QualificationAEC-Q101

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