STL210N4F7
DISCRETEManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STripFET F7 series STL210N4F7 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 40V and offers a continuous drain current (Id) of 120A at 25°C (Tc). With a low on-resistance (Rds On) of 1.6mOhm at 16A and 10V, it minimizes conduction losses. The STL210N4F7 is housed in an 8-PowerVDFN package, specifically the PowerFlat™ (5x6) footprint, facilitating efficient surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 43nC at 10V and input capacitance (Ciss) of 3600pF at 25V. This MOSFET is rated for a maximum power dissipation of 150W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). It finds application in automotive and industrial power management systems.
Additional Information
Series: STripFET F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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