STL19N65M5
MOSFET N-CH 650V 12.5A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL19N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This device features a high drain-source voltage rating of 650V and a continuous drain current capability of 12.5A (Tc) at 25°C. Its low on-resistance (Rds On) of 240mOhm at 7.5A and 10V drive voltage, combined with a maximum junction temperature of 150°C, ensures efficient power handling. The MOSFET offers a gate charge of 31 nC and input capacitance of 1240 pF, facilitating fast switching performance. Packaged in an 8-PowerVDFN (PowerFlat™ 8x8 HV) for surface mounting, this component is supplied on tape and reel. Applications include power factor correction, switch-mode power supplies, and solar inverters.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta), 12.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1240 pF @ 100 V |
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