STL19N60M2
MOSFET N-CH 600V 11A PWRFLAT HVManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ M2 series N-Channel Power MOSFET. This STL19N60M2 is a 600 V device with a continuous drain current of 11 A at 25°C (Tc) and a maximum power dissipation of 90 W (Tc). It features N-Channel technology and is housed in a PowerFlat™ (8x8) HV surface mount package. Key parameters include a Vgs(th) of 4V (Max) at 250µA, a gate charge (Qg) of 21.5 nC (Max) at 10V, and input capacitance (Ciss) of 791 pF (Max) at 100V. The device operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for high-voltage applications in power supply, lighting, and industrial motor control sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 21.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 791 pF @ 100 V |
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