STL19N60DM2
MOSFET N-CH 600V 11A PWRFLAT HVManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STL19N60DM2 is an N-Channel Power MOSFET from the MDmesh™ DM2 series. This component is designed for high-voltage applications, featuring a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) capability of 11A at 25°C. The device offers a low on-resistance (Rds On) of 320 mOhm at 5.5A, 10V, and a maximum power dissipation of 90W (Tc). It utilizes STMicroelectronics' advanced PowerFlat™ (8x8) HV package, a surface-mount solution that facilitates efficient thermal management. Key parameters include a gate charge (Qg) of 21 nC at 10V and a threshold voltage (Vgs(th)) of 5V at 250µA. The STL19N60DM2 is suitable for use in power factor correction, switch-mode power supplies, and industrial applications requiring robust high-voltage switching.
Additional Information
Series: MDmesh™ DM2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
Request a Quote
Clients Also Buy
STB45N50DM2AG
MOSFET N-CH 500V 35A D2PAK
STB45N40DM2AG
MOSFET N-CH 400V 38A D2PAK
STW56N60DM2
MOSFET N-CH 600V 50A TO247
