STL190N4F7AG
MOSFET N-CH 40V 120A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL190N4F7AG is an N-Channel STripFET™ MOSFET designed for high-efficiency power switching applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 127W (Tc). The low on-resistance of 2mOhm at 17.5A and 10V gate drive voltage is achieved through advanced trench technology. Input capacitance (Ciss) is rated at 3000pF at 25V, and gate charge (Qg) is 41nC at 10V. This AEC-Q101 qualified component is housed in an 8-PowerVDFN, PowerFlat™ (5x6) package with wettable flanks for enhanced solder joint reliability during surface mounting. Operating temperature ranges from -55°C to 175°C (TJ). Its robust design makes it suitable for automotive, industrial, and power supply applications.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 127W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
| Qualification | AEC-Q101 |
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