STL18NM60N
MOSFET N-CH 600V 6A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ II series N-Channel Power MOSFET, part number STL18NM60N. This device offers a 600V drain-source breakdown voltage and a continuous drain current of 12A at 25°C case temperature. With a maximum Rds(on) of 310mOhm at 6A and 10V, it features low on-state resistance. The PowerFlat™ (8x8) HV package provides a 3W power dissipation at 25°C ambient and up to 110W at 25°C case. Key parameters include a gate charge (Qg) of 35 nC at 10V and input capacitance (Ciss) of 1000 pF at 50V. This surface mount component operates up to 150°C (TJ) and is supplied in Tape & Reel (TR) packaging. Applications include high-voltage power conversion in industrial and consumer electronics.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta), 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 310mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
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