STL18N55M5
MOSFET N-CH 550V 2.4A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STL18N55M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This device features a drain-source voltage (Vdss) of 550 V and a continuous drain current (Id) of 2.4 A at 25°C ambient, and 13 A at 25°C case temperature. It offers a low on-resistance (Rds On) of 270 mOhm maximum at 6 A and 10 V gate-source voltage. The component is packaged in a Surface Mount PowerFlat™ (8x8) HV, suitable for high-voltage applications. Maximum power dissipation is rated at 3 W (Ta) and 90 W (Tc). Key parameters include a gate charge (Qg) of 31 nC at 10 V and input capacitance (Ciss) of 1352 pF at 100 V. This device is typically utilized in power supply, lighting, and industrial applications.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta), 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1352 pF @ 100 V |
Request a Quote
Clients Also Buy
STD18N55M5
MOSFET N-CH 550V 16A DPAK
STD18N65M5
MOSFET N-CH 650V 15A DPAK
STF45N65M5
MOSFET N-CH 650V 35A TO220FP
