STL180N6F7
MOSFET N-CH 60V 32A/120A PWRFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL180N6F7, an STripFET™ F7 series N-channel Power MOSFET, offers robust performance in a 5x6 PowerFlat™ package. This device features a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 32A at 25°C ambient temperature, scaling to 120A under 25°C case temperature. The low on-resistance of 2.4mOhm (max) at 16A and 10V gate drive voltage, coupled with a maximum gate charge of 79.5 nC, ensures efficient switching. Input capacitance (Ciss) is rated at 4825 pF (max) at 25V. With a maximum power dissipation of 4.8W (Ta) and 166W (Tc), the STL180N6F7 is suitable for demanding applications in the automotive and industrial sectors. Operating temperature range is -55°C to 175°C. This component is supplied on Tape & Reel.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 166W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 79.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4825 pF @ 25 V |
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