STL17N65M5
MOSFET N-CH 650V 1.8A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ V series N-Channel Power MOSFET, part number STL17N65M5, is designed for high-voltage applications. This device features a 650V Drain-to-Source Voltage (Vdss) and a continuous drain current of 1.8A at ambient temperature (Ta) and 10A at case temperature (Tc). The STL17N65M5 offers a low Rds(on) of 374mOhm at 5.5A and 10V gate drive, with a maximum gate charge (Qg) of 22nC at 10V. Its surface mount 8-PowerVDFN package, also known as PowerFlat™ (8x8) HV, enables efficient heat dissipation with a maximum power dissipation of 2.8W (Ta) and 70W (Tc). This MOSFET is suitable for power factor correction, switch mode power supplies, and industrial motor drives, operating at junction temperatures up to 150°C.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta), 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 374mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 816 pF @ 100 V |
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