STL17N3LLH6
MOSFET N-CH 30V 17A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL17N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This device features a 30V drain-source breakdown voltage and a continuous drain current of 17A at 25°C (Tc). The low on-resistance of 4.5mOhm is achieved at 8.5A and 10V Vgs, with a maximum gate charge (Qg) of 17 nC at 4.5V Vgs. Input capacitance (Ciss) is specified at a maximum of 1690 pF at 25V Vds.
This MOSFET is housed in an 8-PowerVDFN, PowerFlat™ (3.3x3.3) package, suitable for surface mounting. It offers a maximum power dissipation of 2W (Ta) and 50W (Tc). The operating temperature range is -55°C to 150°C (TJ). This component is widely utilized in automotive, industrial, and consumer electronics applications requiring efficient power switching. It is supplied on tape and reel.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerFlat™ (3.3x3.3) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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