STL16N65M5
MOSFET N-CH 650V 12A PWRFLAT HVManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL16N65M5 is an N-Channel Power MOSFET from the MDmesh™ V series, designed for high-voltage applications. This component features a 650V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum Rds On of 299mOhm at 6A and 10V, it offers efficient switching performance. The device boasts a low gate charge (Qg) of 31 nC at 10V and an input capacitance (Ciss) of 1250 pF at 100V. It is housed in an 8-PowerVDFN (PowerFlat™ HV) surface mount package, enabling high power dissipation of 90W (Tc) and 3W (Ta). This MOSFET is suitable for use in applications requiring robust high-voltage switching, such as power supplies, converters, and inverters across various industrial sectors.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (8x8) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 100 V |
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