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STL16N1VH5

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STL16N1VH5

MOSFET N-CH 12V 16A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL16N1VH5 is an N-Channel STripFET™ V series Power MOSFET. This device features a 12V drain-source voltage and supports a continuous drain current of 16A at 25°C case temperature. The low on-resistance of 3mOhm is achieved at 8A drain current and 4.5V gate-source voltage. Optimized for high-efficiency switching applications, it offers 2W power dissipation in free air and 50W when mounted on a heatsink. The STL16N1VH5 is available in an 8-PowerVDFN (PowerFlat™ 3.3x3.3mm) package, suitable for surface mounting. Key electrical parameters include a maximum gate charge of 26.5 nC at 4.5V Vgs and an input capacitance of 2085 pF at 12V Vds. This component is utilized in automotive and industrial power management systems.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 8A, 4.5V
FET Feature-
Power Dissipation (Max)2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id500mV @ 250µA (Min)
Supplier Device PackagePowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs26.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2085 pF @ 12 V

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