STL160NS3LLH7
MOSFET N-CH 30V 160A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STL160NS3LLH7 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VII series. This device features a 30V drain-source breakdown voltage and a continuous drain current of 160A at 25°C (Tc). The low on-resistance of 2.1mOhm is achieved at 18A and 10V gate drive. Designed for high-efficiency power conversion, it operates with gate drive voltages between 4.5V and 10V. The component offers a maximum power dissipation of 84W (Tc) and a gate charge of 20 nC at 4.5V. Input capacitance (Ciss) is specified at a maximum of 3245 pF at 25V. This surface mount component utilizes the PowerFlat™ (5x6) package, also known as 8-PowerVDFN, and is supplied on tape and reel. It is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 84W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3245 pF @ 25 V |
Request a Quote
Clients Also Buy
STD100N10F7
MOSFET N CH 100V 80A DPAK
STD25N10F7
MOSFET N-CH 100V 25A DPAK
STL7N10F7
MOSFET N-CH 100V POWERFLAT
