STL160N4F7
MOSFET N-CH 40V 120A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ F7 series N-Channel Power Flat™ (5x6) MOSFET, part number STL160N4F7. This surface mount device features a 40 V drain-source voltage and a continuous drain current of 120 A at 25°C (Tc). With a maximum power dissipation of 111 W (Tc) and a low on-resistance of 2.5 mOhm @ 16 A, 10 V, this component is suitable for high-power applications. Key parameters include a gate charge of 29 nC @ 10 V and input capacitance of 2300 pF @ 25 V. Typical applications include automotive, industrial power supplies, and power management systems. The STL160N4F7 is supplied in Tape & Reel packaging.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 111W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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