STL160N3LLH6
MOSFET N-CH 30V 160A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL160N3LLH6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This device features a 30 V drain-source breakdown voltage and a continuous drain current of 160 A at 25°C (Tc), with a maximum power dissipation of 136 W (Tc). It offers a low on-resistance of 1.3 mOhm at 17.5 A and 10 V gate-source voltage. Fabricated with STMicroelectronics' advanced MOSFET technology, it utilizes a PowerFlat™ (5x6) package for efficient thermal management. Key parameters include a gate charge (Qg) of 61.5 nC at 4.5 V and input capacitance (Ciss) of 6375 pF at 25 V. This component is suitable for high-current switching applications across various industries, including automotive and industrial power systems. It is supplied in a Tape & Reel (TR) package for automated assembly.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 61.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6375 pF @ 25 V |
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