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STL140N6F7

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STL140N6F7

MOSFET N-CH 60V 145A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL140N6F7 is a 60V N-Channel MOSFET from the DeepGATE™, STripFET™ VII series. This device features a low Rds(on) of 2.5mOhm at 16A and 10V Vgs, optimized for high-efficiency power switching. With a continuous drain current of 145A (Tc), it is suitable for demanding applications. The MOSFET is housed in an 8-PowerVDFN (PowerFlat™ 5x6) package, facilitating surface mounting and efficient thermal management with a power dissipation of 125W (Tc). Key parameters include a gate charge of 40 nC (max) at 10V Vgs and input capacitance of 2700 pF (max) at 25V Vds. The operating junction temperature reaches 175°C. This component is widely utilized in automotive, industrial power supplies, and electric vehicle applications.

Additional Information

Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C145A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2700 pF @ 25 V

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