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STL140N4F7AG

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STL140N4F7AG

MOSFET N-CH 40V 120A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STripFET™ STL140N4F7AG is an N-channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 111W (Tc). The device exhibits a low on-resistance of 2.5mOhm maximum at 16A and 10V gate drive. Key parameters include a gate charge of 29 nC (max) at 10V and input capacitance of 2300 pF (max) at 25V. This AEC-Q101 qualified MOSFET is supplied in an 8-PowerVDFN package, utilizing the PowerFlat™ (5x6) footprint with wettable flanks for enhanced solder joint reliability. Operating across a temperature range of -55°C to 175°C (TJ), the STL140N4F7AG is suitable for automotive and other high-performance power management systems. The device is packaged on a tape and reel (TR).

Additional Information

Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 16A, 10V
FET Feature-
Power Dissipation (Max)111W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 25 V
QualificationAEC-Q101

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