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STL135N8F7AG

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STL135N8F7AG

MOSFET N-CH 80V 130A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL135N8F7AG is an 80V N-Channel Power MOSFET from the STripFET™ F7 series. This AEC-Q101 qualified device features a low Rds(on) of 3.6 mOhm at 13A and 10V Vgs, with a continuous drain current of 130A at 25°C (Tc). The STL135N8F7AG utilizes STMicroelectronics' advanced PowerFlat™ (5x6) package with wettable flank technology for enhanced solder joint reliability and optimized thermal performance, supporting up to 135W power dissipation at 25°C (Tc). Key parameters include a gate charge (Qg) of 103 nC (max) at 10V Vgs and input capacitance (Ciss) of 6800 pF (max) at 40V Vds. This component is suitable for demanding automotive applications. The device operates within an extended temperature range of -55°C to 175°C (TJ).

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C130A (Tc)
Rds On (Max) @ Id, Vgs3.6mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackagePowerFlat™ (5x6)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6800 pF @ 40 V
QualificationAEC-Q101

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