STL130N8F7
MOSFET N-CH 80V 130A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STL130N8F7 is a high-performance N-Channel STripFET™ VII Power MOSFET designed for demanding power applications. Featuring DeepGATE™ technology, this device offers an 80V drain-source voltage (Vdss) and a continuous drain current (Id) of 130A at 25°C (Tc), with a maximum power dissipation of 135W (Tc). Its ultra-low on-resistance (Rds On) of 3.6mOhm at 13A and 10V Vgs significantly minimizes conduction losses. The STL130N8F7 is housed in an 8-PowerVDFN (PowerFlat™ 5x6) surface-mount package, suitable for efficient thermal management in automotive and industrial power conversion systems. Key specifications include a gate charge (Qg) of 96 nC @ 10 V and input capacitance (Ciss) of 6340 pF @ 40 V. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6340 pF @ 40 V |
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