STL130N6F7
MOSFET N-CH 60V 130A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL130N6F7, an N-Channel STripFET™ F7 series MOSFET, offers a 60V drain-source voltage and 130A continuous drain current at 25°C (Tc). This PowerFlat™ (5x6) package component features a maximum Rds(on) of 3.5mOhm at 13A and 10V. Key parameters include a gate charge of 42nC (max) at 10V and input capacitance of 2600pF (max) at 25V. With a maximum power dissipation of 125W (Tc) or 4.8W (Ta), it operates within a temperature range of -55°C to 175°C (TJ). This device is suitable for high-power switching applications in automotive and industrial sectors.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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