STL12N65M5
MOSFET N-CH 650V 8.5A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics MDmesh™ V series STL12N65M5 is a 650V N-Channel Power MOSFET designed for high-efficiency power conversion applications. Featuring a low Rds(on) of 530mOhm at 4.25A and 10V Vgs, this device offers excellent conduction losses. Its 8.5A continuous drain current capability and 48W maximum power dissipation in a surface mount PowerFlat™ (5x6) package make it suitable for demanding power designs. Key parameters include 17nC gate charge and 644pF input capacitance. This MOSFET is utilized in industries such as consumer electronics and industrial power supplies.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 530mOhm @ 4.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 644 pF @ 100 V |
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