STL12N65M2
MOSFET N-CH 650V 5A POWERFLAT HVManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL12N65M2 is an N-Channel Power MOSFET from the MDmesh™ series, designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous drain current (Id) of 5 A at 25°C (Tc), with a maximum power dissipation of 48 W (Tc). The device offers a low on-resistance (Rds On) of 750 mOhm at 3 A and 10 V.
The STL12N65M2 is housed in an 8-PowerVDFN package, also known as PowerFlat™ (5x6) HV, suitable for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 12.5 nC at 10 V and a maximum input capacitance (Ciss) of 410 pF at 100 V. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±25 V. This MOSFET is commonly utilized in power factor correction, switch mode power supplies, and lighting applications. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) HV |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 100 V |
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