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STL12N3LLH5

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STL12N3LLH5

MOSFET N-CH 30V 12A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STL12N3LLH5 is an N-Channel STripFET™ V series Power MOSFET designed for high-efficiency power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 9mOhm maximum at 6A and 10V Vgs, facilitating minimal conduction losses. With a gate charge (Qg) of 12nC maximum at 4.5V and input capacitance (Ciss) of 1500pF characteristic, it ensures efficient switching performance. Rated for 2W (Ta) and 50W (Tc) power dissipation, and operating from -55°C to 150°C, this MOSFET is suitable for industrial, automotive, and consumer electronics power management solutions. It is supplied in a compact 8-PowerVDFN package, also known as PowerFlat™ (3.3x3.3), on tape and reel.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackagePowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±22V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 25 V

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