STL120N8F7
MOSFET N-CH 80V 120A POWERFLATManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STL120N8F7 is an N-channel STripFET™ F7 series MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 120A at 25°C (Tc). The low on-resistance (Rds On) of 4.4mOhm at 11.5A and 10V drive voltage, coupled with a gate charge (Qg) of 60 nC (Max) at 10V, ensures efficient switching performance. The device offers a maximum power dissipation of 140W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). Housed in an 8-PowerVDFN package with a PowerFlat™ (5x6) footprint, it is supplied on tape and reel. This MOSFET is suitable for use in industrial, automotive, and power supply applications.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.8W (Ta), 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerFlat™ (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4570 pF @ 25 V |
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