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STL120N2VH5

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STL120N2VH5

MOSFET N-CH 20V 120A POWERFLAT

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STL120N2VH5 is an N-Channel Power MOSFET from the STripFET™ V series. This device features a 20 V drain-source voltage and a continuous drain current of 120 A at 25°C (Tc), with a maximum power dissipation of 80 W (Tc). The low on-resistance is specified as 3 mOhm at 14 A and 4.5 V gate-source voltage. Designed for surface mounting, it utilizes the PowerFlat™ (5x6) packaging, also known as 8-PowerVDFN, supplied on tape and reel. Key parameters include a gate charge of 29 nC at 2.5 V and input capacitance of 4660 pF at 15 V. Operating temperature range is -55°C to 150°C. This component is utilized in applications such as power management and automotive systems.

Additional Information

Series: STripFET™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 14A, 4.5V
FET Feature-
Power Dissipation (Max)80W (Tc)
Vgs(th) (Max) @ Id700mV @ 250µA (Min)
Supplier Device PackagePowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs29 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds4660 pF @ 15 V

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